| PART |
Description |
Maker |
| NPT1015 NPT1015-15 |
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT2018 NPT2018-15 |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Industry Standard Plastic Package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的，单台BLOk反应腔二极管隔离模块（二五?安高达2400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| D1023UK D1023 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时，单端）（镀金多用的DMOS射频硅场效应管（60 28V的，500MHz的单端式））
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Microsemi, Corp.
|
| WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
| KB25MKG01B05BB KB25MKG01B12A KB25MKW01-05-A KB25MK |
0.4VA maximum 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A 20mV ~ 28V)
Miniature Pushbuttons
|
Nihon Kaiheiki Industry Co. Ltd.
|
| DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CM420855 |
SCR/Diode POW-R-BLOKModules 55 Amperes/800 Volts
SCR/Diode POW-R-BLOK Modules 55 Amperes/800 Volts
SCR/Diode POW-R-BLOK⑩ Modules 55 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| RFP-10N50TV |
Aluminum Nitride Terminations
|
Anaren Microwave
|
